J—FET型トランジスタ装置
文献类型：专利
| 作者 | 鈴木 克弘; 矢島 弘義; 嶋田 潤一; 加藤 尚範; 下山 謙司; 後藤 秀樹 |
| 发表日期 | 2000-02-25 |
| 专利号 | JP3036600B2 |
| 著作权人 | 工業技術院長 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | J—FET型トランジスタ装置 |
| 英文摘要 | PURPOSE:To obtain a semiconductor device, which can be used as a transistor and as a laser oscillator and can be manufactured easily, by a method wherein an active layer and clad layers, which come into contact to both ends of the active layer, are doped into an N-type, a clad layer under the active layer is used as a high-resistance layer and a clad layer on the active layer is doped into a P-type. CONSTITUTION:A high-resistance layer, an AlxGa1-xAs layer (undoped) 15, is epitaxially grown on a semi-insulative GaAs substrate 19 and an N-type GaAs active layer 14 is epitaxially grown thereon. The N-type GaAs layer is a doped layer and moreover, a P-type AlyGa1-yAs layer 13 is epitaxially grown thereon. The layer 13 is also a doped layer. A P-type GaAs layer 16 is epitaxially grown, a silicon nitride film is deposited on this layer 16 and after this silicon nitride film is patterned by a photolithography method, the silicon nitride film situated at parts, which are used as source and drain parts, is removed. |
| 公开日期 | 2000-04-24 |
| 申请日期 | 1990-04-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47416]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 工業技術院長 |
| 推荐引用方式 GB/T 7714 | 鈴木 克弘,矢島 弘義,嶋田 潤一,等. J—FET型トランジスタ装置. JP3036600B2. 2000-02-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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