Semiconductor laser with optimum resonator
文献类型：专利
| 作者 | NARUI, HIRONOBU; DOI, MASATO; SAHARA, KENJI; MATSUDA, OSAMU |
| 发表日期 | 1995-08-01 |
| 专利号 | US5438583 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser with optimum resonator |
| 英文摘要 | A semiconductor laser and an optical device employing the semiconductor laser are described. The semiconductor laser comprises and activating layer; first and second cladding layers for sandwiching the activating layer, the energy gaps of which are greater than that of the activating layer; a current blocking layer provided in contact with both sides of the activating layer; a first electrode electrically connected to the first cladding layer; and a second electrode electrically connected to the second cladding layer. The activating layer has a structure that the activating layer is two-dimensionally confined within the first cladding layer, the second cladding layer, and the current blocking layer, reflectivity of at least on end face of a resonator of the activating layer is less than, or equal to 5%, and loss in the resonator of the activating layer is higher than, or equal to 100 cm-3. |
| 公开日期 | 1995-08-01 |
| 申请日期 | 1993-12-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47417]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | NARUI, HIRONOBU,DOI, MASATO,SAHARA, KENJI,et al. Semiconductor laser with optimum resonator. US5438583. 1995-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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