Roughened sidewall ridge for high power fundamental mode semiconductor ridge waveguide laser operation
文献类型：专利
| 作者 | BEHFAR-RAD, ABBAS; JOST, MARK E.; HARDER, CHRISTOPH S. |
| 发表日期 | 1994-05-10 |
| 专利号 | US5311539 |
| 著作权人 | GLOBALFOUNDRIES INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Roughened sidewall ridge for high power fundamental mode semiconductor ridge waveguide laser operation |
| 英文摘要 | A semiconductor ridge waveguide laser structure with a roughened sidewall ridge that includes a substrate and an active layer disposed between lower and upper cladding layers. The structure further includes a waveguide ridge which comprises a contact layer and a trapezoidal ridge portion 16 of the upper cladding layer. The trapezoidal ridge portion has roughened sidewalls which provides low contact resistance. |
| 公开日期 | 1994-05-10 |
| 申请日期 | 1992-11-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47418]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GLOBALFOUNDRIES INC. |
| 推荐引用方式 GB/T 7714 | BEHFAR-RAD, ABBAS,JOST, MARK E.,HARDER, CHRISTOPH S.. Roughened sidewall ridge for high power fundamental mode semiconductor ridge waveguide laser operation. US5311539. 1994-05-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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