Semiconductor laser diode and the manufacturing method thereof
文献类型：专利
| 作者 | INOUE, YUTAKA; SEMBA, YASUHISA; SORIMACHI, SUSUMU; KOUZU, KOUICHI |
| 发表日期 | 2010-01-26 |
| 专利号 | US7653114 |
| 著作权人 | USHIO OPTO SEMICONDUCTORS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser diode and the manufacturing method thereof |
| 英文摘要 | A multibeam semiconductor laser diode having: an n-type semiconductor substrate; an n-type clad layer, an active layer, a p-type clad layer and a contact layer; a plurality of partitioning grooves extending from one end to the other end of the substrate and formed from the contact layer to a predetermined depth of the p-type clad layer; a stripe-shaped ridge sandwiched between two separation grooves; an insulating layer covering an area from each side wall of the contact layer of each ridge to an end of the partitioning region via the separation groove; a first electrode formed on a second plane of the substrate; and a second electrode formed in each partitioning region covering an area above the ridge, separation grooves and multilayer semiconductor layers outside the separation grooves, the second electrode being constituted of a lower second electrode layer and an upper second plated layer. |
| 公开日期 | 2010-01-26 |
| 申请日期 | 2008-05-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47420]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | USHIO OPTO SEMICONDUCTORS, INC. |
| 推荐引用方式 GB/T 7714 | INOUE, YUTAKA,SEMBA, YASUHISA,SORIMACHI, SUSUMU,et al. Semiconductor laser diode and the manufacturing method thereof. US7653114. 2010-01-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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