半導体レーザ及びその駆動方法
文献类型：专利
| 作者 | 原 利民 |
| 发表日期 | 2001-01-19 |
| 专利号 | JP3149944B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ及びその駆動方法 |
| 英文摘要 | PURPOSE:To make it possible to obtain a laser which has a stabilized wavelength without output fluctuations by allowing reflectance change in a part which adjoins a gain section of a wave control section to conform to space mean reflectance change in a waveguide structure section which has no wavelength control structure which includes the gain section respectively. CONSTITUTION:A portion A of an active section and a portion P of a phase control section have a layer structure which grow an n-GaAs buffer, an n-Al0.5 Ga0.5As, a nondoped (phi) Al0.1Ga0.9As active layer 2, p-Al0.5Ga0.5As an p-GaAs while a portion C of a wave control section continues etching operation until the phi-AlGaAs active layer 2 has disappeared and prepares a cycle lattice thereon and regrows and forms the p-Al0.5Ga0.5As and p-GaAs where etching is carried out in width of about 3mum up to the GaAs near the substrate A high resistor Al0.3Ga0.7As is buried once again where electrodes 4, 4, and 6 and a common electrode 9 are formed respectively. In synchronism with the injection current to the portions A and P, thereby injecting injection current into the portion C. |
| 公开日期 | 2001-03-26 |
| 申请日期 | 1990-11-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47423]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 原 利民. 半導体レーザ及びその駆動方法. JP3149944B2. 2001-01-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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