Semiconductor laser device and production method therefor
文献类型：专利
| 作者 | YAMAMOTO, SABURO; KAYASHI, HIROSHI; MORIMOTO, TAIJI; YANO, SEIKI |
| 发表日期 | 1990-06-26 |
| 专利号 | US4937836 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and production method therefor |
| 英文摘要 | A semiconductor laser device, includes (1) a first semiconductor layer having a mesa-shaped stripe, (2) a current blocking layer applied on the first semiconductor layer except the top of the mesa-shaped stripe of the first semiconductor layer, the current blocking layer allowing the electric current to flow only through the mountain-shaped region, (3) a first cladding layer applied on the current blocking layer and on the top of the mountain-shaped stripe of the first semiconductor layer, and having charge carriers of the same type with that of the first semiconductor layer, (4) an active layer applied on the first cladding layer, and (5) a second cladding layer applied on the active layer, and having charge carriers of the type opposite to that of the first cladding layer, wherein the first cladding layer, the active layer and the second cladding layer compose a multilayer structure of the double heterojunction type for the laser excitation. The first cladding layer is thin so that the laser light excited in the active layer reaches the current blocking region that is outside the mesa-shaped region while it hardly reaches the first semiconductor layer through the mesa-shaped region. |
| 公开日期 | 1990-06-26 |
| 申请日期 | 1984-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47424]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YAMAMOTO, SABURO,KAYASHI, HIROSHI,MORIMOTO, TAIJI,et al. Semiconductor laser device and production method therefor. US4937836. 1990-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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