Infrared light sources with semimetal electron injection
文献类型：专利
| 作者 | KURTZ, STEVEN R.; BIEFELD, ROBERT M.; ALLERMAN, ANDREW A. |
| 发表日期 | 1999-11-30 |
| 专利号 | US5995529 |
| 著作权人 | SANDIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Infrared light sources with semimetal electron injection |
| 英文摘要 | An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6 mu m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source. |
| 公开日期 | 1999-11-30 |
| 申请日期 | 1997-04-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47443]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANDIA CORPORATION |
| 推荐引用方式 GB/T 7714 | KURTZ, STEVEN R.,BIEFELD, ROBERT M.,ALLERMAN, ANDREW A.. Infrared light sources with semimetal electron injection. US5995529. 1999-11-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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