Semiconductor laser device which is stable for a long period of time
文献类型：专利
| 作者 | KAWANISHI, HIDENORI; HAYASHI, HIROSHI; MORIMOTO, TAIJI; KANEIWA, SHINJI; YAMAGUCHI, MASAHIRO |
| 发表日期 | 1990-05-15 |
| 专利号 | US4926431 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device which is stable for a long period of time |
| 英文摘要 | A semiconductor laser device comprises a substrate and a multi-layered crystal structure with an active layer for laser-oscillating operation, the multi-layered crystal structure being disposed on the substrate and having a striped channel area through which current is supplied to the active layer and a light-absorbing area positioned outside of the channeled area by which a difference between the amount of light to be absorbed inside of the channeled area and the amount of light to be absorbed outside of the channeled area is created, which causes a difference in the effective refractive index of the active layer, resulting in an optical waveguide in the active layer, wherein the active layer is flat and uniform and the width of the portion of the channel area in the vicinity of at least one facet is wider than that of the remaining portion of the channel area. |
| 公开日期 | 1990-05-15 |
| 申请日期 | 1989-09-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47445]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAWANISHI, HIDENORI,HAYASHI, HIROSHI,MORIMOTO, TAIJI,et al. Semiconductor laser device which is stable for a long period of time. US4926431. 1990-05-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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