Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications
文献类型：专利
| 作者 | HUI, RONGQING; JIANG, HONG-XING; LIN, JING-YU |
| 发表日期 | 2008-03-18 |
| 专利号 | US7345812 |
| 著作权人 | KANSAS, UNIVERSITY OF |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications |
| 英文摘要 | The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials. |
| 公开日期 | 2008-03-18 |
| 申请日期 | 2004-02-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47453]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KANSAS, UNIVERSITY OF |
| 推荐引用方式 GB/T 7714 | HUI, RONGQING,JIANG, HONG-XING,LIN, JING-YU. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications. US7345812. 2008-03-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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