P型ZnTe単結晶の製造方法
文献类型：专利
| 作者 | 菱田 有二; 石井 宏明 |
| 发表日期 | 1997-10-17 |
| 专利号 | JP2708866B2 |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | P型ZnTe単結晶の製造方法 |
| 英文摘要 | PURPOSE:To obtain the P-type ZnTe single crystal by flying Zn, Te and Li as an electron beam toward the substrate of a single crystal having good lattice consistency with ZnTe, replacing the Li incorporated in a ZnTe single crystal by Zn and allowing the Zn to function as the acceptor impurities. CONSTITUTION:A Zn cell 2, a Te cell 3 and an Li cell 4 are opposed to the substrate 1 of GaAs having good lattice consistency with ZnTe. The substrate 1 is held at 620 deg.C prior to single crystal growth to finally clean the surface, and then cooled to 320 deg.C appropriate for the growth of a ZnTe single crystal. The Zn cell 2 contg. a Zn source material is subsequently heated to about 300 deg.C, the Te cell 3 contg. a Te source material to about 300 deg.C and the Li cell 4 contg. an Li source material to about 200 deg.C. As a result, the Zn and Te are flown to the opposed substrate 1, and a P-type ZnTe single crystal is grown on the surface of the substrate 1 by epitaxy. |
| 公开日期 | 1998-02-04 |
| 申请日期 | 1989-03-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47456]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | 菱田 有二,石井 宏明. P型ZnTe単結晶の製造方法. JP2708866B2. 1997-10-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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