発光装置の製造方法
文献类型：专利
| 作者 | 岩野 英明 |
| 发表日期 | 2000-09-14 |
| 专利号 | JP3108926B2 |
| 著作权人 | セイコーエプソン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 発光装置の製造方法 |
| 英文摘要 | PURPOSE:To monolithically integrate a semiconductor and SHG element so as to improve the coupling efficiency between laser light and the SHG element by providing an electrode which impresses an electric field in the film thickness direction to a secondary higher harmonics generating thin-film optical waveguide. CONSTITUTION:A secondary higher harmonics generating optical wveguide section is constituted of a ridge type optical waveguide composed of a ZnSxSe1-x (x=0.5 to 0) clad layer 303, super lattice nonlinear optical waveguide layer 304 of ZnSe and ZnS, and ZnSxSe1-x (S=0.5 to 0) clad layer 305 and a ZnSxSe1-x(x=0.1) film covering the waveguide. In addition, an electrode 307 is provided and, when a voltage is applied across electrodes 307 and 306, an electric field can be impressed upon the super lattice optical waveguide layer 304. The position of the layer 304 is made coincident with that of a GaAs active layer 204. Therefore, most of laser light can impinge on the secondary higher harmonic generating optical waveguide layer 304 with little loss. |
| 公开日期 | 2000-11-13 |
| 申请日期 | 1990-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47459]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | セイコーエプソン株式会社 |
| 推荐引用方式 GB/T 7714 | 岩野 英明. 発光装置の製造方法. JP3108926B2. 2000-09-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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