中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Index guided semiconductor laser biode with shallow selective IILD

文献类型:专利

作者PAOLI, THOMAS L.; THORNTON, ROBERT L.; BOUR, DAVID P.; TREAT, DAVID W.
发表日期1998-11-03
专利号US5832019
著作权人XEROX CORPORATION
国家美国
文献子类授权发明
其他题名Index guided semiconductor laser biode with shallow selective IILD
英文摘要An index-guided semiconductor laser diode made by impurity-induced layer disordering (IILD) of GaInP and AlGaInP heterostructures. In some embodiments, prior to the IILD, wing regions flanking an active mesa region are etched down close to the active layer so that the selective IILD involves a shallow diffusion only. High-performance, index-guided (AlGa)0.5In0.5P lasers may be fabricated with this technique, analogous to those made in the AlGaAs material system. Also described are several techniques for reducing parasitic leakage current via the IILD regions, which include methods for providing p-n junctions or high band gap materials to reduce the parasitic leakage. In other embodiments, a planar structure is produced but with an ultra-thin upper cladding layer. Only a shallow IILD step is necessary to penetrate below the active region. Excessive out coupling and absorption losses are avoided by choosing materials that will minimize such losses, especially a pure gold metal coating as the p-contact metal.
公开日期1998-11-03
申请日期1994-11-28
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/47461]  
专题半导体激光器专利数据库
作者单位XEROX CORPORATION
推荐引用方式
GB/T 7714
PAOLI, THOMAS L.,THORNTON, ROBERT L.,BOUR, DAVID P.,et al. Index guided semiconductor laser biode with shallow selective IILD. US5832019. 1998-11-03.

入库方式: OAI收割

来源:西安光学精密机械研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。