Index guided semiconductor laser biode with shallow selective IILD
文献类型：专利
| 作者 | PAOLI, THOMAS L.; THORNTON, ROBERT L.; BOUR, DAVID P.; TREAT, DAVID W. |
| 发表日期 | 1998-11-03 |
| 专利号 | US5832019 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Index guided semiconductor laser biode with shallow selective IILD |
| 英文摘要 | An index-guided semiconductor laser diode made by impurity-induced layer disordering (IILD) of GaInP and AlGaInP heterostructures. In some embodiments, prior to the IILD, wing regions flanking an active mesa region are etched down close to the active layer so that the selective IILD involves a shallow diffusion only. High-performance, index-guided (AlGa)0.5In0.5P lasers may be fabricated with this technique, analogous to those made in the AlGaAs material system. Also described are several techniques for reducing parasitic leakage current via the IILD regions, which include methods for providing p-n junctions or high band gap materials to reduce the parasitic leakage. In other embodiments, a planar structure is produced but with an ultra-thin upper cladding layer. Only a shallow IILD step is necessary to penetrate below the active region. Excessive out coupling and absorption losses are avoided by choosing materials that will minimize such losses, especially a pure gold metal coating as the p-contact metal. |
| 公开日期 | 1998-11-03 |
| 申请日期 | 1994-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47461]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | PAOLI, THOMAS L.,THORNTON, ROBERT L.,BOUR, DAVID P.,et al. Index guided semiconductor laser biode with shallow selective IILD. US5832019. 1998-11-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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