Semiconductor light emitting device and fabrication method for semiconductor light emitting device
文献类型：专利
| 作者 | HATORI, NOBUAKI; YAMAMOTO, TSUYOSHI; SUDO, HISAO; ARAKAWA, YASUHIKO |
| 发表日期 | 2013-07-09 |
| 专利号 | US8483252 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device and fabrication method for semiconductor light emitting device |
| 英文摘要 | A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer. |
| 公开日期 | 2013-07-09 |
| 申请日期 | 2008-03-19 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47462]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | HATORI, NOBUAKI,YAMAMOTO, TSUYOSHI,SUDO, HISAO,et al. Semiconductor light emitting device and fabrication method for semiconductor light emitting device. US8483252. 2013-07-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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