Semiconductor laser with InGaAs or InGaAsP active layer
文献类型：专利
| 作者 | TERAKADO, TOMOJI |
| 发表日期 | 1994-05-03 |
| 专利号 | US5309467 |
| 著作权人 | BENHOV GMBH, LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser with InGaAs or InGaAsP active layer |
| 英文摘要 | A semiconductor laser having a buried stripe structure is provided, which comprises a first cladding layer of InP, an active layer containing at least an InGaAsP or InGaAs layer, a barrier layer of In1-xAlxAs (x=0.48 to 00), a second cladding layer of InP, a mesa-shaped stripe portion composed of the first cladding layer, active layer, barrier layer and second cladding layer, and a pair of buried layers disposed on both sides of the stripe portion so as to bury the same therebetween formed in this order on an InP substrate. The hetero barrier of conduction band between the active and barrier layers is increased by the barrier layer when an electric current is injected, thus being capable of restricting the electrons injected into the active layer to be leaked to the second cladding layer. It is preferable that a second barrier layer of In1-xAlxAs (x=0.48 to 00) is disposed on each side of the stripe portion. |
| 公开日期 | 1994-05-03 |
| 申请日期 | 1992-10-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47465]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BENHOV GMBH, LLC |
| 推荐引用方式 GB/T 7714 | TERAKADO, TOMOJI. Semiconductor laser with InGaAs or InGaAsP active layer. US5309467. 1994-05-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。