Buried heterostructure semiconductor laser device
文献类型：专利
| 作者 | YOSHIDA, TOSHIHIKO; TAKIGUCHI, HARUHISA; KANEIWA, SHINJI; KUDO, HIROAKI |
| 发表日期 | 1990-03-20 |
| 专利号 | US4910744 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Buried heterostructure semiconductor laser device |
| 英文摘要 | A semiconductor laser device comprising a semiconductor substrate, an active layer having a refractive index greater than that of said substrate and having an energy gap smaller than that of said substrate, and a cladding layer having a conductivity type different from that of said substrate, in that order, resulting in a double-heterostructure, wherein two parallel grooves with a given distance therebetween are disposed in the double-heterostructure so as to reach said substrate and a first burying layer having the same conductivity type as said substrate, a second burying layer having a conductivity type different from that of said substrate and a third burying layer having the same conductivity type as said substrate are disposed outside of the two grooves in that order, and moreover a semiconductor layer with the flat surface having a conductivity type different from that of said substrate is disposed over the third burying layer and the area positioned between the two parallel grooves. |
| 公开日期 | 1990-03-20 |
| 申请日期 | 1987-12-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47468]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YOSHIDA, TOSHIHIKO,TAKIGUCHI, HARUHISA,KANEIWA, SHINJI,et al. Buried heterostructure semiconductor laser device. US4910744. 1990-03-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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