中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
光双安定半導体レーザ

文献类型:专利

作者町田 豊稔; 延原 裕之
发表日期2001-02-23
专利号JP3162411B2
著作权人富士通株式会社
国家日本
文献子类授权发明
其他题名光双安定半導体レーザ
英文摘要PURPOSE:To provide an optical bistable semiconductor laser in an optical bistable semiconductor laser switchable with an optical input, the foregoing laser being capable of effective utilzation of the optical input light and not permitting the input light to be mixed into an optical output light. CONSTITUTION:There are provided a signal crystal semiconductor substrate 11, a semiconductor optical resonator structure 24 including an active region possessing a function to amplify light and a saturable adsorption region 16 both formed on the single crystal semiconductor substrate 11, and defining in a first plane a narrow optical path surface through which the light advances, and a diffraction grating 13 formed on the single crystal semiconductor substrate 11 for diffracting predetermined light incident from the first plane and directing the light from a direction intersecting the narrow optical path surface to the saturable absorption region 16.
公开日期2001-04-25
申请日期1991-03-20
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/47469]  
专题半导体激光器专利数据库
作者单位富士通株式会社
推荐引用方式
GB/T 7714
町田 豊稔,延原 裕之. 光双安定半導体レーザ. JP3162411B2. 2001-02-23.

入库方式: OAI收割

来源:西安光学精密机械研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。