Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source
文献类型：专利
| 作者 | FLOYD, PHILIP D. |
| 发表日期 | 2001-05-29 |
| 专利号 | US6238944 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source |
| 英文摘要 | The barrier layers within a quantum well active region of a vertical cavity surface emitting laser can be silicon doped. Under thermal annealing, the silicon doped barrier layers will form disordered regions of the quantum well active region around the remaining non-disordered regions of the quantum well active region. The disordered regions of the quantum well active region will prevent diffusion of injected carriers from the non-disordered, light emitting quantum well active region. |
| 公开日期 | 2001-05-29 |
| 申请日期 | 1999-12-21 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47477]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | FLOYD, PHILIP D.. Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source. US6238944. 2001-05-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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