Semiconductor stripe laser
文献类型：专利
| 作者 | AVRAMESCU, ADRIAN STEFAN; VIERHEILIG, CLEMENS; EICHLER, CHRISTOPH; LELL, ALFRED; MUELLER, JENS |
| 发表日期 | 2017-06-06 |
| 专利号 | US9673590 |
| 著作权人 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor stripe laser |
| 英文摘要 | A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide. |
| 公开日期 | 2017-06-06 |
| 申请日期 | 2015-05-05 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47480]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 推荐引用方式 GB/T 7714 | AVRAMESCU, ADRIAN STEFAN,VIERHEILIG, CLEMENS,EICHLER, CHRISTOPH,et al. Semiconductor stripe laser. US9673590. 2017-06-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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