Semiconductor light-emitting devices
文献类型：专利
| 作者 | SHIMOYAMA, KENJI; HOSOI, NOBUYUKI; FUJII, KATSUSHI; YAMAUCHI, ATSUNORI; GOTOH, HIDEKI; SATO, YOSHIHITO |
| 发表日期 | 1998-09-22 |
| 专利号 | US5811839 |
| 著作权人 | MITSUBISHI CHEMICAL CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light-emitting devices |
| 英文摘要 | The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 mu m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 mu m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 mu m to 100 mu m. |
| 公开日期 | 1998-09-22 |
| 申请日期 | 1995-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47485]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CHEMICAL CORPORATION |
| 推荐引用方式 GB/T 7714 | SHIMOYAMA, KENJI,HOSOI, NOBUYUKI,FUJII, KATSUSHI,et al. Semiconductor light-emitting devices. US5811839. 1998-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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