Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)
文献类型：专利
| 作者 | KISH, JR., FRED A.; HURTT, SHEILA; JOYNER, CHARLES H.; SCHNEIDER, RICHARD P. |
| 发表日期 | 2007-04-24 |
| 专利号 | US7208770 |
| 著作权人 | INFINERA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) |
| 英文摘要 | In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe. |
| 公开日期 | 2007-04-24 |
| 申请日期 | 2005-02-16 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47487]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INFINERA CORPORATION |
| 推荐引用方式 GB/T 7714 | KISH, JR., FRED A.,HURTT, SHEILA,JOYNER, CHARLES H.,et al. Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs). US7208770. 2007-04-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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