InGaN diode-laser pumped II-VI semiconductor lasers
文献类型：专利
| 作者 | SPINELLI, LUIS A.; ZHOU, HAILONG; AUSTIN, R. RUSSEL |
| 发表日期 | 2006-11-14 |
| 专利号 | US7136408 |
| 著作权人 | COHERENT, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | InGaN diode-laser pumped II-VI semiconductor lasers |
| 英文摘要 | A semiconductor laser includes a multilayer semiconductor laser heterostructure including at least one active layer of a II-VI semiconductor material and is optically pumped by one or more indium gallium nitride (InGaN) diode-lasers. Group II elements in the II-VI semiconductor material are zinc, cadmium, magnesium, beryllium, strontium, and barium. Group VI elements in the II-VI semiconductor material are Sulfur, Selenium, and Tellurium. In one example of the laser an edge emitting heterostructure includes two active layers of zinc cadmium selenide, two waveguide layers of zinc magnesium sulfoselenide, and two cladding layers, also of zinc magnesium sulfoselenide. Proportions of elements in the cladding layer material and the waveguide layer material are selected such that the waveguide layer material has a higher bandgap than the material of the waveguide layers. In another example, a two dimensional array of InGaN diode-lasers is arranged to optically pump a one dimensional array of II-VI edge-emitting heterostructure lasers. |
| 公开日期 | 2006-11-14 |
| 申请日期 | 2004-06-14 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47488]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | COHERENT, INC. |
| 推荐引用方式 GB/T 7714 | SPINELLI, LUIS A.,ZHOU, HAILONG,AUSTIN, R. RUSSEL. InGaN diode-laser pumped II-VI semiconductor lasers. US7136408. 2006-11-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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