Unstable resonator semiconductor laser
文献类型：专利
| 作者 | ARMOUR, ERIC A.; HERSEE, STEPHEN D. |
| 发表日期 | 1995-08-01 |
| 专利号 | US5438585 |
| 著作权人 | SCIENCE & TECHNOLOGY CORPORATION @ UNM |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Unstable resonator semiconductor laser |
| 英文摘要 | A semiconductor laser diode provides high optical power output in a single diffraction-limited farfield lobe using a conventional Fabry-Perot resonant cavity and a planar well graded index separate confinement heterostructure (QW-GRINSCH) active region. An antiguide region is optically coupled to the active region of the laser. In one embodiment, the antiguide region has a lateral variation in the effective index of refraction that forms a diverging medium that causes higher order optical modes to have higher losses in the resonant cavity. The waveguide medium preferably varies in thickness and the thickness approximates a parabolic function in the lateral direction. The antiguide region is enclosed by GaAs layers to minimize oxidation at material interfaces during device fabrication. |
| 公开日期 | 1995-08-01 |
| 申请日期 | 1994-05-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47490]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SCIENCE & TECHNOLOGY CORPORATION @ UNM |
| 推荐引用方式 GB/T 7714 | ARMOUR, ERIC A.,HERSEE, STEPHEN D.. Unstable resonator semiconductor laser. US5438585. 1995-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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