Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device
文献类型：专利
| 作者 | TANAKA, AKIRA; SHIOZAWA, HIDEO; WATANABE, MINORU; GEN-EI, KOICHI; TANAKA, HIROKAZU |
| 发表日期 | 2007-11-13 |
| 专利号 | US7295588 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device |
| 英文摘要 | The present invention provides a semiconductor laser element, a method of fabrication thereof, and a multi-wavelength monolithic semiconductor laser device that achieve self-sustained pulsation up to a high output level and achieve self-sustained pulsation over a wide output range. A semiconductor laser element that exhibits self-sustained pulsation in a predetermined output region, said semiconductor laser element comprising: a substrate; a first conductive type clad layer formed on said substrate; an active layer formed on said first conductive type clad layer for emitting light by current injection; a second conductive type first clad layer formed on said active layer; and a stripe-shaped second conductive type second clad layer formed on said second conductive type first clad layer in a first direction, in such a manner that the cross-sectional surface of said stripe-shaped second conductive type second clad layer in a direction perpendicular to said first direction has a shape having an upper edge and a lower edge that face each other and side edges that connect between said upper edge and said lower edge, where the minimum width thereof is at least 70% but no more than 100% of the maximum width. |
| 公开日期 | 2007-11-13 |
| 申请日期 | 2003-11-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47492]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | TANAKA, AKIRA,SHIOZAWA, HIDEO,WATANABE, MINORU,et al. Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device. US7295588. 2007-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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