Binary stratified structures for periodically pumped semiconductor lasers
文献类型:专利
作者 | CHEN, HOWARD Z.; CHO, ALFRED Y. |
发表日期 | 1996-08-27 |
专利号 | US5550854 |
著作权人 | LUCENT TECHNOLOGIES INC. |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Binary stratified structures for periodically pumped semiconductor lasers |
英文摘要 | A laser having a binary stratified structure of alternating sections of graded-index, separate confinement heterostructure (GRINSCH) and semi-insulating semiconductor formed in the direction of light propagation. The active region of the laser includes at least two GRINSCH sections upon a substrate and at least three filler sections sandwiching the at least two GRINSCH sections in an alternating fashion. An analysis of the practical limit on the minimum threshold current and the packaging problems of a semiconductor laser based on the binary stratified structure is included. |
公开日期 | 1996-08-27 |
申请日期 | 1994-11-29 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/47495] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | LUCENT TECHNOLOGIES INC. |
推荐引用方式 GB/T 7714 | CHEN, HOWARD Z.,CHO, ALFRED Y.. Binary stratified structures for periodically pumped semiconductor lasers. US5550854. 1996-08-27. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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