半導体レーザを用いた光双安定素子
文献类型：专利
| 作者 | 橋本 順一 |
| 发表日期 | 2001-01-19 |
| 专利号 | JP3149878B2 |
| 著作权人 | 住友電気工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザを用いた光双安定素子 |
| 英文摘要 | PURPOSE:To enable an optical bistable element to execute an optical bistable operation of a TE wave and a TM wave without giving a special environment. CONSTITUTION:An N-type clad layer 2 and a light trapping layer 3 are made to grow on an N-type semiconductor substrate 1, and then a distortionless or a compression-distorted first active layer 4 is formed. Then, a second active layer 6 on which tensile stress is applied is formed thereon through the intermediary of a barrier layer 5. A light trapping layer 7 and other layers are successively grown, and lastly electrodes 10 and 11 are provided to the top and the bottom of the layered body concerned respectively for the formation of a bistable element. In the second active layer 6 which contains tensile distortion, positive holes are released from an energy level degenerate at a GAMMA point, an electron- heavy positive hole transition correspondent to the gain of a TE wave is relatively lessened, and an electron-light positive hole transition correspondent to the gain of a TM wave is relatively enhanced. By this setup, a bistable element of this design can carry out an optical bistable operation of a TE wave and a TM wave without preparing such a special environment that a semiconductor laser is cooled. |
| 公开日期 | 2001-03-26 |
| 申请日期 | 1991-05-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47500]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 住友電気工業株式会社 |
| 推荐引用方式 GB/T 7714 | 橋本 順一. 半導体レーザを用いた光双安定素子. JP3149878B2. 2001-01-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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