中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Method of passivating etched mirror facets of semiconductor laser diodes

文献类型:专利

作者BUCHMANN, PETER L.; WEBB, DAVID J.; VETTIGER, PETER
发表日期1993-01-05
专利号US5177031
著作权人INTERNATIONAL BUSINESS MACHINES CORPORATION A CORP. OF NEW YORK
国家美国
文献子类授权发明
其他题名Method of passivating etched mirror facets of semiconductor laser diodes
英文摘要A method of passivating etched mirror facets of semiconductor laser diodes which enhances device reliability. The etched mirror facet is first subjected to a weet-etch process to substantially remove any native oxide as well as any surface layer which may have been mechanically damaged during the preceding mirror etch process. Then, a passivation pre-treatment is applied whereby any residual oxygen is removed and a sub-monolayer is formed which permanently reduces the non-radiative recombination of minority carriers at the mirror facet. Finally, the pre-treated mirror surface is coated with a passivation layer to avoid any environmental effect on the mirror.
公开日期1993-01-05
申请日期1991-05-30
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/47501]  
专题半导体激光器专利数据库
作者单位INTERNATIONAL BUSINESS MACHINES CORPORATION A CORP. OF NEW YORK
推荐引用方式
GB/T 7714
BUCHMANN, PETER L.,WEBB, DAVID J.,VETTIGER, PETER. Method of passivating etched mirror facets of semiconductor laser diodes. US5177031. 1993-01-05.

入库方式: OAI收割

来源:西安光学精密机械研究所

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