Semiconductor laser having an improved stacked structure
文献类型：专利
| 作者 | SHIGIHARA, KIMIO; HANAMAKI, YOSHIHIKO; SHIBATA, KIMITAKA; KAWASAKI, KAZUSHIGE |
| 发表日期 | 2007-10-30 |
| 专利号 | US7289546 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser having an improved stacked structure |
| 英文摘要 | An n-type first cladding layer, a first guide layer, a first enhancing layer, an active layer, a second enhancing layer, a second guide layer, and a p-type second cladding layer are sequentially stacked on an n-type GaAs substrate. The thickness of each of the first guide layer and the second guide layer is 100 nm or more. In such a semiconductor laser, the difference between the Eg (band gap energy) of the first guide layer and the Eg of the active layer (or the difference between the Eg of the second guide layer and the Eg of the active layer) is made 0.66 times or less of the difference between the Eg of the first cladding layer and the Eg of the active layer (or the difference between the Eg of the second cladding layer and the Eg of the active layer). |
| 公开日期 | 2007-10-30 |
| 申请日期 | 2006-10-19 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47507]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | SHIGIHARA, KIMIO,HANAMAKI, YOSHIHIKO,SHIBATA, KIMITAKA,et al. Semiconductor laser having an improved stacked structure. US7289546. 2007-10-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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