Gallium nitride-based compound semiconductor laser and method of manufacturing the same
文献类型：专利
| 作者 | ISHIKAWA, MASAYUKI; YAMAMOTO, MASAHIRO; NUNOUE, SHINYA; NISHIO, JOHJI; HATAKOSHI, GENICHI; FUJIMOTO, HIDETOSHI |
| 发表日期 | 1999-11-16 |
| 专利号 | US5987048 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Gallium nitride-based compound semiconductor laser and method of manufacturing the same |
| 英文摘要 | A gallium nitride-based compound semiconductor laser has a double-heterojunction structure, in which an active layer is sandwiched between cladding layers, on a sapphire substrate. A GaN current blocking layer having a striped opening portion is formed on the p-cladding layer. A p-GaN buried layer and a contact layer through which a current is injected into the opening portion of the current blocking layer and which are larger in area than the opening portion are formed. The active layer has a multiple quantum well structure constituted by a cyclic structure formed by cyclically stacking two types of InGaAlN layers which have different band gaps and are 10 nm or more thick. |
| 公开日期 | 1999-11-16 |
| 申请日期 | 1997-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47509]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | ISHIKAWA, MASAYUKI,YAMAMOTO, MASAHIRO,NUNOUE, SHINYA,et al. Gallium nitride-based compound semiconductor laser and method of manufacturing the same. US5987048. 1999-11-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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