Semiconductor device and fabrication method
文献类型：专利
| 作者 | LIU, HUIYUN; LEE, ANDREW DAVID; SEEDS, ALWYN JOHN |
| 发表日期 | 2017-10-17 |
| 专利号 | US9793686 |
| 著作权人 | UCL BUSINESS PLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device and fabrication method |
| 英文摘要 | A semiconductor device comprising a silicon substrate on which is grown a <100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top. |
| 公开日期 | 2017-10-17 |
| 申请日期 | 2016-04-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47514]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | UCL BUSINESS PLC |
| 推荐引用方式 GB/T 7714 | LIU, HUIYUN,LEE, ANDREW DAVID,SEEDS, ALWYN JOHN. Semiconductor device and fabrication method. US9793686. 2017-10-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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