Halbleiterlaser und Verfahren zu seiner Herstellung
文献类型：专利
| 作者 | AIKI,KUNIO; CHINONE,NAOKI; DOI ATSUTOSHI; ITO RYOICHI; NAKAMURA,SATOSHI |
| 发表日期 | 1986-05-15 |
| 专利号 | DE2926367C2 |
| 著作权人 | HITACHI LTD. |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | Halbleiterlaser und Verfahren zu seiner Herstellung |
| 英文摘要 | A semiconductor laser device is formed of a semiconductor material assembly including a first semiconductor layer having an active region formed directly by crystal growth on a substrate for the crystal growth having on the surface thereof a second semiconductor layer. A third semiconductor layer is also formed on the first layer. The refractive index of each of the second semiconductor material region and the third semiconductor layer is smaller than that of the first semiconductor layer while the band gap of each of the second semiconductor material region and the third semiconductor layer is broader than that of the first semiconductor layer. In order to provide mode stabilization even at long wavelength, the thickness of the active region formed at the interface between said first semiconductor layer and said substrate for crystal growth is made larger than the thickness of the other portions in the first semiconductor layer so that the effective refractive index to laser beams is changed stepwise in a direction perpendicular to the direction of the laser beams. |
| 公开日期 | 1986-05-15 |
| 申请日期 | 1979-06-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47517]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD. |
| 推荐引用方式 GB/T 7714 | AIKI,KUNIO,CHINONE,NAOKI,DOI ATSUTOSHI,et al. Halbleiterlaser und Verfahren zu seiner Herstellung. DE2926367C2. 1986-05-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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