AlGaInP-based semiconductor laser
文献类型：专利
| 作者 | HAGIMOTO, MASATO; FUKAI, HARUKI; KIYOSUMI, TSUTOMU; SASAKI, SHINJI; KAWANAKA, SATOSHI |
| 发表日期 | 2016-08-23 |
| 专利号 | US9425583 |
| 著作权人 | USHIO OPTO SEMICONDUCTORS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | AlGaInP-based semiconductor laser |
| 英文摘要 | An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1−x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1−xn)0.5In0.5P (0.9 |
| 公开日期 | 2016-08-23 |
| 申请日期 | 2012-12-14 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47520]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | USHIO OPTO SEMICONDUCTORS, INC. |
| 推荐引用方式 GB/T 7714 | HAGIMOTO, MASATO,FUKAI, HARUKI,KIYOSUMI, TSUTOMU,et al. AlGaInP-based semiconductor laser. US9425583. 2016-08-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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