Semiconductor light emitting element with p-type non-alloy electrode including a platinum layer and method for fabricating the same
文献类型：专利
| 作者 | INABA, YUICHI; FUJIHARA, KIYOSHI; ISHINO, MASATO; SHIMAZAKI, TAKESHI; KIDOGUCHI, ISAO |
| 发表日期 | 1998-08-11 |
| 专利号 | US5793788 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting element with p-type non-alloy electrode including a platinum layer and method for fabricating the same |
| 英文摘要 | A semiconductor light emitting element includes a p-type electrode which in turn includes a contact electrode layer including at least a Pt layer. Particularly, the semiconductor light emitting element further includes a layered structure including at least an n-type cladding layer, an active layer, and a p-type cladding layer; and a p-type contact layer formed above the layered structure, and the contact electrode layer is formed on the p-type contact layer. |
| 公开日期 | 1998-08-11 |
| 申请日期 | 1996-08-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47523]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | INABA, YUICHI,FUJIHARA, KIYOSHI,ISHINO, MASATO,et al. Semiconductor light emitting element with p-type non-alloy electrode including a platinum layer and method for fabricating the same. US5793788. 1998-08-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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