Hetero-junction laser diode
文献类型：专利
| 作者 | SEKINE, NORIHIKO |
| 发表日期 | 2004-05-11 |
| 专利号 | US6734464 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Hetero-junction laser diode |
| 英文摘要 | A laser diode comprises a first cladding layer having a first conductivity, a second cladding layer having a second conductivity, an active layer located between the first cladding layer and the second cladding layer and extending from one end surface to the other end surface, a first electrode configured to inject a carrier with a first polarity into the active layer via the first cladding layer, and a second electrode configured to inject a carrier with a second polarity into the active layer via the second cladding layer. The active layer comprises a first active region and a second active region, which are arranged alternately and periodically from one end surface to the other end surface in the direction of light propagation, and the first active region and the second active region define type-II hetero junction between them. |
| 公开日期 | 2004-05-11 |
| 申请日期 | 2002-10-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47525]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | SEKINE, NORIHIKO. Hetero-junction laser diode. US6734464. 2004-05-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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