Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth
文献类型：专利
| 作者 | EPLER, JOHN E.; TREAT, DAVID W.; PAOLI, THOMAS L. |
| 发表日期 | 1990-10-09 |
| 专利号 | US4962057 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth |
| 英文摘要 | In situ evaporation of selected surface regions or layers of compound semiconductors is accomplished, without breaking the growth system environment by employing photo-induced evaporation enhancement in chemical vapor deposition epitaxy. Intense radiation from an energy source (27) desorbs or causes evaporation of consecutive monolayers of atoms or combined atoms from the surface crystal (34) by thermal evaporation. The desorbed atoms from the growth surface are removed atomic layer by atomic layer in a fairly uniform and systematic manner, and may be characterized as "monolayer peeling", resulting in a morphology that is sculpturally smooth and molecularly continuous. In this sense, the method of this invention is analogous to erasing or etching crystal material and is the antithesis to laser deposition patterning, wherein erasure after growth or reduced rate of growth during growth provides "negative growth patterning". This patternable negative growth process is coupled with a positive growth process for selectively thinning regions of semiconductor layers in three-dimensional crystal structures, limited only by the functional capabilities of the growth reactor. Selective monotonic increasing and decreasing film thickness in situ can be accomplished while beam illumination (26) remains stationary for a predetermined period with exposure of the growth surface accomplished through a patterned mask or, alternatively, while the beam spot or multiple beam spots are modulated and scanned across the growth surface of the film. |
| 公开日期 | 1990-10-09 |
| 申请日期 | 1988-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47526]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | EPLER, JOHN E.,TREAT, DAVID W.,PAOLI, THOMAS L.. Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth. US4962057. 1990-10-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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