Semiconductor laser device, method of manufacturing semiconductor laser device, and semiconductor laser array
文献类型：专利
| 作者 | MOTODA, TAKASHI |
| 发表日期 | 2014-10-07 |
| 专利号 | US8855161 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device, method of manufacturing semiconductor laser device, and semiconductor laser array |
| 英文摘要 | A semiconductor laser device includes a substrate, ridge stripes on the substrate and separated by separation sections, a top surface electrode continuously extending over the ridge stripes, and a bottom surface electrode on a bottom surface of the substrate. Each of the ridge stripes includes a lower cladding layer on the substrate, an active layer on the lower cladding layer, an upper cladding layer on the active layer, and a contact layer on the upper cladding layer. |
| 公开日期 | 2014-10-07 |
| 申请日期 | 2013-01-24 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47527]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | MOTODA, TAKASHI. Semiconductor laser device, method of manufacturing semiconductor laser device, and semiconductor laser array. US8855161. 2014-10-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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