Surface emission type semiconductor light-emitting device
文献类型：专利
| 作者 | YOSHIDA, TOMOAKI; INABA, FUMIO; ITO, HIROMASA; SAITO, TETSURO; SATO, SHIRO; AZUMI, JUNICHI |
| 发表日期 | 1990-01-30 |
| 专利号 | US4897846 |
| 著作权人 | MITSUBISHI CABLE INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Surface emission type semiconductor light-emitting device |
| 英文摘要 | A surface emission type semiconductor light-emitting device includes a base having a main surface, a current blocking layer formed on the base, and a semiconductor layer formed on the current blocking layer. A circular recess or hole having a side wall which is substantially perpendicular to the main surface is formed in the semiconductor layer as extending therethrough and partly into the base. An impurity is introduced into the semiconductor layer through the side wall and thus there is defined a cylindrical diffusion region around the recess. A p-n junction is defined at an outer boundary of the diffusion region and the p-n junction effectively defines a light-emitting activation region. An additional diffusion region may be formed in the semiconductor layer for narrowing a current path in the semiconductor layer. A second current blocking layer may be formed on top of the semiconductor layer. The semiconductor layer may have a multi-layer structure which may be constructed to provide a current confinement effect. |
| 公开日期 | 1990-01-30 |
| 申请日期 | 1988-03-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47528]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CABLE INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | YOSHIDA, TOMOAKI,INABA, FUMIO,ITO, HIROMASA,et al. Surface emission type semiconductor light-emitting device. US4897846. 1990-01-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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