導波路型半導体光素子の製造方法
文献类型：专利
| 作者 | 宮澤 丈夫; 浅井 裕充; 三上 修 |
| 发表日期 | 1998-10-09 |
| 专利号 | JP2836822B2 |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 導波路型半導体光素子の製造方法 |
| 英文摘要 | PURPOSE:To simplify a manufacturing process by using a region having small electron well width as an optical guide and employing a region having large quantum well width as an optical active section. CONSTITUTION:A quantum well 10 having small quantum well width Lz' and a large quantization level Eg' and a quantum well 11 having large quantum well width Lz and a small quantization level Eg are formed simultaneously through one-time epitaxial growth onto a processing substrate. The operation wavelength of a semiconductor optical element is brought generally to a wavelength close to the energy gap of an active layer. Consequently, when the quantum well 11 having the small quantization level Eg is used as the active layer, the quantum well 10 having the large quantization level Eg' is brought to a transparent state to the operation wavelength. As a result, an active region and an optical guide can be shaped through one-time epitaxial growth. Accordingly, since the optical guide need not be formed, a manufacturing process can be simplified, and yield can be improved and the cost of products reduced. |
| 公开日期 | 1998-12-14 |
| 申请日期 | 1988-06-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47535]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | 宮澤 丈夫,浅井 裕充,三上 修. 導波路型半導体光素子の製造方法. JP2836822B2. 1998-10-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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