Semiconductor ridge waveguide laser with lateral current injection
文献类型：专利
| 作者 | XU, JINGMING; SHUR, MICHAEL; GELMONT, BORIS |
| 发表日期 | 1996-10-08 |
| 专利号 | US5563902 |
| 著作权人 | SAMSUNG ELECTRONICS, CO. LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor ridge waveguide laser with lateral current injection |
| 英文摘要 | A semiconductor laser device is provided in which an active layer is sandwiched between and upper and lower cladding layer, the lower cladding layer being situated on a semi-insulating substrate. The upper cladding layer includes a raised ridge section running from end to end between the facets or end surfaces of the laser cavity. The ridge section aids in optical confinement. A p+ contact region and an n+ contact region are formed extending though the upper cladding layer, the active region and the lower cladding layer on both sides of the ridge to provide lateral injection of charge carriers into the active region of the laser. |
| 公开日期 | 1996-10-08 |
| 申请日期 | 1995-04-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47542]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS, CO. LTD. |
| 推荐引用方式 GB/T 7714 | XU, JINGMING,SHUR, MICHAEL,GELMONT, BORIS. Semiconductor ridge waveguide laser with lateral current injection. US5563902. 1996-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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