Strain balanced laser diode
文献类型：专利
| 作者 | BHAT, RAJARAM; SIZOV, DMITRY S.; ZAH, CHUNG-EN |
| 发表日期 | 2013-01-22 |
| 专利号 | US8358673 |
| 著作权人 | THORLABS QUANTUM ELECTRONICS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Strain balanced laser diode |
| 英文摘要 | According to the concepts of the present disclosure, laser diode waveguide configurations are contemplated where the use of Al in the waveguide layers of the laser is presented in the form of InGaN/Al(In)GaN waveguiding superstructure comprising optical confining wells (InGaN) and strain compensating barriers (Al(In)GaN). The composition of the optical confining wells is chosen such that they provide strong optical confinement, even in the presence of the Al(In)GaN strain compensating barriers, but do not absorb lasing emission. The composition of the strain compensating barriers is chosen such that the Al(In)GaN exhibits tensile strain that compensates for the compressive strain of InGaN optical confinement wells but does not hinder the optical confinement. |
| 公开日期 | 2013-01-22 |
| 申请日期 | 2011-02-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47552]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THORLABS QUANTUM ELECTRONICS, INC. |
| 推荐引用方式 GB/T 7714 | BHAT, RAJARAM,SIZOV, DMITRY S.,ZAH, CHUNG-EN. Strain balanced laser diode. US8358673. 2013-01-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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