Strip buried heterostructure laser
文献类型：专利
| 作者 | LOGAN, RALPH A.; TSANG, WON-TIEN |
| 发表日期 | 1981-05-26 |
| 专利号 | US4269635 |
| 著作权人 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Strip buried heterostructure laser |
| 英文摘要 | A double heterostructure laser having a pair of opposite-conductivity-type, wide bandgap cladding layers separated by a narrower bandgap active region is characterized in that the active region includes a low-loss waveguide layer and contiguous therewith a narrower bandgap active layer in the form of a narrow strip which extends along the longitudinal (resonator) axis of the laser. Suitable lateral current confinement means, such as reversed biased p-n junctions, are provided to constrain pumping current to flow in a narrow channel through the active layer. Lasers of this type exhibit relatively high pulsed power outputs (e.g., 400 mW), linear L-I characteristics, stable fundamental transverse mode and single longitudinal mode oscillation. In another embodiment the surfaces of the waveguide layer adjacent the active layer are provided with distributed feedback gratings. Also described are techniques for shaping the active layer without the introduction of debilitating defects therein, as well as procedures for LPE growth on Al-containing Group III-V compound layers which are exposed to processing in the ambient. |
| 公开日期 | 1981-05-26 |
| 申请日期 | 1979-09-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47554]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 推荐引用方式 GB/T 7714 | LOGAN, RALPH A.,TSANG, WON-TIEN. Strip buried heterostructure laser. US4269635. 1981-05-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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