Optical semiconductor device, method of producing the optical semiconductor device, and laser device using optical semiconductor devices
文献类型：专利
| 作者 | HIGASHI, TOSHIO; OGITA, SHOUICHI |
| 发表日期 | 1994-09-13 |
| 专利号 | US5347533 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor device, method of producing the optical semiconductor device, and laser device using optical semiconductor devices |
| 英文摘要 | An optical semiconductor device includes first and second cladding layers, a light guide layer sandwiched between the first and second cladding layers, and a layer structure provided in the light guide layer. The layer structure has a first periodic variation in a refractive index in a predetermined direction, and a second periodic variation in an optical gain in the predetermined direction. The first periodic variation has a period identical to that of the second periodic variation. The first periodic variation and the second periodic variation have a phase difference. |
| 公开日期 | 1994-09-13 |
| 申请日期 | 1992-09-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47559]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | HIGASHI, TOSHIO,OGITA, SHOUICHI. Optical semiconductor device, method of producing the optical semiconductor device, and laser device using optical semiconductor devices. US5347533. 1994-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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