III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device
文献类型：专利
| 作者 | KYONO, TAKASHI; TAKAGI, SHIMPEI; SUMITOMO, TAKAMICHI; YOSHIZUMI, YUSUKE; ENYA, YOHEI; UENO, MASAKI; YANASHIMA, KATSUNORI |
| 发表日期 | 2015-02-10 |
| 专利号 | US8953656 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device |
| 英文摘要 | A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the laser device. The c-axis of the nitride semiconductor is inclined at an angle ALPHA relative to a normal axis to the semipolar surface toward the waveguide axis direction. The laser structure includes first and second fractured faces intersecting with the waveguide axis. A laser cavity of the laser device includes the first and second fractured faces extending from edges of first and second faces. The first fractured face includes a step provided at an end face of an InGaN layer of the semiconductor region and extending in a direction from one side face to the other of the laser device. |
| 公开日期 | 2015-02-10 |
| 申请日期 | 2012-01-19 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47561]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | KYONO, TAKASHI,TAKAGI, SHIMPEI,SUMITOMO, TAKAMICHI,et al. III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device. US8953656. 2015-02-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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