中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Distributed feedback semiconductor laser with gain modulation

文献类型:专利

作者MAKINO, TOSHIHIKO
发表日期2000-02-15
专利号US6026110
著作权人NORTEL NETWORKS UK LIMITED
国家美国
文献子类授权发明
其他题名Distributed feedback semiconductor laser with gain modulation
英文摘要The invention provides a complex coupled distributed feedback (DFB) semiconductor laser device with energy band gap modulation. The device comprises an active region formed on a substrate, and a barrier region adjacent the active region, the energy band gap of the barrier region modulated along a cavity length direction to form a complex coupled grating. The modal gain is higher in the barrier region areas, having narrower energy band gap, due to higher material gain and higher optical confinement factor in these areas. Periodic modulation of the energy band gap of the barrier region produces gain (or loss) modulation and index modulation in the material of the active region, thus, gain coupling and index coupling mechanisms being provided. Methods of producing gain modulation in the DFB laser, and fabrication thereof are also provided.
公开日期2000-02-15
申请日期1997-10-16
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/47562]  
专题半导体激光器专利数据库
作者单位NORTEL NETWORKS UK LIMITED
推荐引用方式
GB/T 7714
MAKINO, TOSHIHIKO. Distributed feedback semiconductor laser with gain modulation. US6026110. 2000-02-15.

入库方式: OAI收割

来源:西安光学精密机械研究所

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