Distributed feedback semiconductor laser with gain modulation
文献类型:专利
作者 | MAKINO, TOSHIHIKO |
发表日期 | 2000-02-15 |
专利号 | US6026110 |
著作权人 | NORTEL NETWORKS UK LIMITED |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Distributed feedback semiconductor laser with gain modulation |
英文摘要 | The invention provides a complex coupled distributed feedback (DFB) semiconductor laser device with energy band gap modulation. The device comprises an active region formed on a substrate, and a barrier region adjacent the active region, the energy band gap of the barrier region modulated along a cavity length direction to form a complex coupled grating. The modal gain is higher in the barrier region areas, having narrower energy band gap, due to higher material gain and higher optical confinement factor in these areas. Periodic modulation of the energy band gap of the barrier region produces gain (or loss) modulation and index modulation in the material of the active region, thus, gain coupling and index coupling mechanisms being provided. Methods of producing gain modulation in the DFB laser, and fabrication thereof are also provided. |
公开日期 | 2000-02-15 |
申请日期 | 1997-10-16 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/47562] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NORTEL NETWORKS UK LIMITED |
推荐引用方式 GB/T 7714 | MAKINO, TOSHIHIKO. Distributed feedback semiconductor laser with gain modulation. US6026110. 2000-02-15. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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