Semiconductor laser device, semiconductor laser module, Raman amplifier using the device or module, and method for forming a suitable current blocking layer
文献类型：专利
| 作者 | IRINO, SATOSHI; TSUKIJI, NAOKI; YOSHIDA, JUNJI |
| 发表日期 | 2005-05-24 |
| 专利号 | US6898228 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device, semiconductor laser module, Raman amplifier using the device or module, and method for forming a suitable current blocking layer |
| 英文摘要 | A diffraction grating is provided in the vicinity of a GRIN-SCH-MQW active layer formed between a radiation side reflection coating provided on a radiation end face of a laser beam and a reflection coating provided on a reflection end face of the laser beam, and on the radiation side reflection coating side. An n-InP layer which covers the upper part of the diffraction grating is also provided, so that the current from the p-side electrode is prevented from being injected to the vicinity of the diffraction grating by the n-InP layer. An n-InPGaAsP diffusion prevention layer forms a non-current injection area so as to suppress alloying with the p-side electrode. |
| 公开日期 | 2005-05-24 |
| 申请日期 | 2002-11-12 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47565]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | IRINO, SATOSHI,TSUKIJI, NAOKI,YOSHIDA, JUNJI. Semiconductor laser device, semiconductor laser module, Raman amplifier using the device or module, and method for forming a suitable current blocking layer. US6898228. 2005-05-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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