Semiconductor laser device having selective absorption qualities
文献类型：专利
| 作者 | FUNABASHI, MASAKI; YATSU, RYOSUKE; KASUKAWA, AKIHIKO |
| 发表日期 | 2003-06-17 |
| 专利号 | US6580740 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device having selective absorption qualities |
| 英文摘要 | A semiconductor laser device includes a semiconductor substrate, an active region formed on the semiconductor substrate and configured to radiate light having a predetermined wavelength range, and a wavelength selecting structure configured to select a first portion of the radiated light for emitting from the semiconductor laser device. An absorption region is located in a vicinity of the active region and configured to selectively absorb a second portion of the radiated light, and the first portion of the radiated light has a different wavelength than the second portion of the radiated light. The absorption region may be an integrated diffraction grating or a selective absorption region of the laser device. The semiconductor laser device may be used in an optical fiber amplifier such as a raman amplifier, a wavelength division multiplexing system, or a semiconductor laser module. |
| 公开日期 | 2003-06-17 |
| 申请日期 | 2001-07-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47569]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | FUNABASHI, MASAKI,YATSU, RYOSUKE,KASUKAWA, AKIHIKO. Semiconductor laser device having selective absorption qualities. US6580740. 2003-06-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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