Semiconductor laser element, semiconductor laser device, and optical apparatus employing the same
文献类型：专利
| 作者 | KAMEYAMA, SHINGO; YUKAWA, HIROYUKI |
| 发表日期 | 2013-10-22 |
| 专利号 | US8565280 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser element, semiconductor laser device, and optical apparatus employing the same |
| 英文摘要 | This semiconductor laser element includes a semiconductor element layer including an active layer and having an emitting side cavity facet and a reflecting side cavity facet, and a facet coating film on a surface of the emitting side cavity facet. The facet coating film includes a photocatalytic layer arranged on an outermost surface of the facet coating film and a dielectric layer arranged between the photocatalytic layer and the emitting side cavity facet. A thickness of the dielectric layer is set to a thickness defined by m×λ/(2×n) (m is an integer), where a wavelength of a laser beam emitted from the active layer is λ and a refractive index of the dielectric layer is n, and at least 1 μm. |
| 公开日期 | 2013-10-22 |
| 申请日期 | 2011-09-14 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47570]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | KAMEYAMA, SHINGO,YUKAWA, HIROYUKI. Semiconductor laser element, semiconductor laser device, and optical apparatus employing the same. US8565280. 2013-10-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。