Laser chips and vertical external cavity surface emitting lasers using the same
文献类型:专利
作者 | KIM, JUN-YOUN |
发表日期 | 2010-03-30 |
专利号 | US7688873 |
著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Laser chips and vertical external cavity surface emitting lasers using the same |
英文摘要 | Example embodiments may provide an increased efficiency laser chip and/or a vertical external cavity surface emitting laser (VECSEL) using the same. Example embodiment laser chips may include a substrate; a DBR (distributed Bragg reflector) layer on the substrate, an active layer on the DBR layer having multiple quantum wells excited by a pump beam to generate light, and/or an upper coating layer on the active layer by alternately stacking first and second layers each having different refractive indexes. Thicknesses of the first and second layers may be substantially equal to a quarter of a wavelength of light generated by the active layer. |
公开日期 | 2010-03-30 |
申请日期 | 2007-10-30 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/47574] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
推荐引用方式 GB/T 7714 | KIM, JUN-YOUN. Laser chips and vertical external cavity surface emitting lasers using the same. US7688873. 2010-03-30. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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