Infrared emitting device and method
文献类型：专利
| 作者 | KURTZ, STEVEN R.; BIEFELD, ROBERT M.; DAWSON, L. RALPH; HOWARD, ARNOLD J.; BAUCOM, KEVIN C. |
| 发表日期 | 1997-04-29 |
| 专利号 | US5625635 |
| 著作权人 | SANDIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Infrared emitting device and method |
| 英文摘要 | An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns. |
| 公开日期 | 1997-04-29 |
| 申请日期 | 1994-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47575]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANDIA CORPORATION |
| 推荐引用方式 GB/T 7714 | KURTZ, STEVEN R.,BIEFELD, ROBERT M.,DAWSON, L. RALPH,et al. Infrared emitting device and method. US5625635. 1997-04-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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