Modulated strain heterostructure light emitting device
文献类型：专利
| 作者 | BUCHAN, NICHOLAS I.; HEUBERGER, WILLI; ROENTGEN, PETER |
| 发表日期 | 1994-12-13 |
| 专利号 | US5373166 |
| 著作权人 | GLOBALFOUNDRIES INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Modulated strain heterostructure light emitting device |
| 英文摘要 | A heterostructure laser diode is provided with an active region that includes a ternary or quaternary semiconductor compound. The composition of the semiconductor compound forming the active region is modulated resulting in an active region with a modulated strain profile ( INCREMENT a/a), e.g., a triangular sawtooth-like strain profile, perpendicular to the laser diodes epitaxial layers, i.e., parallel to the z-axis. This permits the present invention to increase strain and avoid formation of misfit dislocations by compensation, i.e., by inserting strained layers having opposing strains. |
| 公开日期 | 1994-12-13 |
| 申请日期 | 1993-09-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47579]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GLOBALFOUNDRIES INC. |
| 推荐引用方式 GB/T 7714 | BUCHAN, NICHOLAS I.,HEUBERGER, WILLI,ROENTGEN, PETER. Modulated strain heterostructure light emitting device. US5373166. 1994-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。