Semiconductor laser device, semiconductor laser module, and optical fiber amplifier using the device or module
文献类型:专利
作者 | WAKISAKA, TSUYOSHI; TSUKIJI, NAOKI; YOSHIDA, JUNJI; KIMURA, TOSHIO; NAMIKI, SHU |
发表日期 | 2005-01-18 |
专利号 | US6845117 |
著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser device, semiconductor laser module, and optical fiber amplifier using the device or module |
英文摘要 | An n-side electrode, an n-substrate, an n-buffer layer, a GRIN-SCH-MQW active layer, a p-spacer, a p-cladding layer, a p-contact layer, and a p-side electrode are laminated one on top another in that order. Above the n-buffer layer, the GRIN-SCH-MQW layer and the p-spacer layer occupy a narrower area than the n-substrate in a direction that is at right angles to the laser emission direction, wherein the remaining area is occupied by a p-blocking layer and an n-blocking layer. Within the p-spacer layer are embedded a first diffraction grating and a second diffraction grating. Between the first and the second diffraction grating and the p-side electrode is provided a current non-injection area. |
公开日期 | 2005-01-18 |
申请日期 | 2002-11-04 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/47589] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
推荐引用方式 GB/T 7714 | WAKISAKA, TSUYOSHI,TSUKIJI, NAOKI,YOSHIDA, JUNJI,et al. Semiconductor laser device, semiconductor laser module, and optical fiber amplifier using the device or module. US6845117. 2005-01-18. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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